Title :
High-performance HfO2/ZrO2/IGZO thin-film transistors deposited using atmospheric pressure plasma jet
Author :
Chien-Hung Wu ; Kow-Ming Chang ; Hsin-Yu Hsu
Author_Institution :
Dept. of Electron. Eng., Chung Hua Univ., Hsinchu, Taiwan
Abstract :
An atmospheric pressure plasma jet (APPJ) deposition technology that is employed for the preparation of transparent oxide semiconductors film using an eco-friendly water-based metal salt solution as a precursor is presented. Through the use of APPJ indium-gallium-zinc-oxide (IGZO) film as the channel material and a high-k dielectric HfO2/ZrO2 gate stack, IGZO-based transparent thin-film transistors (TFTs) were fabricated and characterised. The HfO2/ZrO2/IGZO-TFTs by APPJ demonstrated excellent electrical characteristics, including a low Vth of 0.63 V, a small subthreshold swing of 0.37 V/dec, a high mobility of 40 cm2/V-s and a large Ion/Ioff ratio of 7 × 108.
Keywords :
hafnium compounds; high-k dielectric thin films; plasma deposition; plasma jets; semiconductor thin films; thin film transistors; zirconium compounds; APPJ IGZO film; APPJ deposition technology; APPJ indium-gallium-zinc-oxide film; HfO2-ZrO2; IGZO-based transparent thin-film transistors; TFT; TOS film; atmospheric pressure plasma jet deposition technology; channel material; ecofriendly water-based metal salt solution; high-k dielectric HfO2-ZrO2 gate stack; transparent oxide semiconductors film; voltage 0.63 V;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2014.1823
