Etched lattice effects in edge-emitters and VCSELs - PBG effects or not?

Author

Rorison, Judy

Author_Institution

Bristol Univ., UK

Volume

1

fYear

2003

fDate

29 June-3 July 2003

Abstract

Summary form only given. There has been a significant amount of study world-wide on etching PBG structures into both VCSELs and edge-emitting lasers. The results of experiments etching PBGs structures into the DBRs of GaAs-based proton-implanted and oxide confined VCSELs using focussed ion beam etching (FIBE) are presented. The results of etching a small section of a PBG lattice on either side of the ridge waveguide in an edge-emitting laser are also be presented. A side mode suppression ratio improvement of 40dB has been observed through this technique. This has been modelled using a finite difference time domain model to understand if this is indeed a PBG effect.

Keywords

III-V semiconductors; distributed Bragg reflector lasers; finite difference time-domain analysis; focused ion beam technology; gallium arsenide; laser modes; photonic band gap; ridge waveguides; sputter etching; surface emitting lasers; waveguide lasers; GaAs; GaAs-based proton-implanted VCSELs; PBG effects; VCSEL; edge-emitters; etched lattice effects; etching; finite difference time domain model; focussed ion beam etching; oxide confined VCSELs; ridge waveguide; side mode suppression ratio; Etching; Finite difference methods; Ion beams; Laser modes; Lattices; Vertical cavity surface emitting lasers; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Transparent Optical Networks, 2003. Proceedings of 2003 5th International Conference on

Print_ISBN

0-7803-7816-4

Type

conf

DOI

10.1109/ICTON.2003.1264608

Filename

1264608