Title :
Towards realization of high quality 2D-photonic crystals in InP/(Ga,In)(As,P)/InP
Author :
Anand, S. ; Mulot, M. ; Ferrini, R. ; Houdré, R. ; Kamp, M. ; Forchel, A.
Author_Institution :
R. Inst. of Technol., Kista, Sweden
fDate :
29 June-3 July 2003
Abstract :
Summary form only given. We report on recent advances in the fabrication of two dimensional photonic crystals (2D-PhCs) in the low-index contrast system, InP/InGaAsP/InP. Relevant state-of-the-art dry etching technologies for high aspect ratio etching of 2D-PhCs in this material(s) are introduced with specific attention to Ar/Cl2 based chemically assisted ion beam etching (CAME). We demonstrate that this method is very promising to realize low-loss 2D PhCs. Etching mechanisms and process parameters crucial for high quality PhC definition are discussed. The optical properties of the fabricated PhCs investigated by internal light source technique by measuring transmission through simple PhC slabs and 1D-cavities are presented. We show that these measurements also provide important insights on the fabrication process, thus making it possible to further optimize the etching parameters so as to obtain high quality PhCs.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; light transmission; optical fabrication; photonic crystals; sputter etching; 1D-cavities; Ar; Ar/Cl2 based chemically assisted ion beam etching; Cl2; InP/(Ga,In)(As,P)/InP; InP/InGaAsP/InP; PhC slabs; fabrication; high aspect ratio etching; high quality 2D-photonic crystals; internal light source technique; low-index contrast system; optical properties; process parameters; state-of-the-art dry etching technologies; transmission; two dimensional photonic crystals; Argon; Chemical technology; Dry etching; Fabrication; Indium phosphide; Ion beams; Light sources; Particle beam optics; Photonic crystals; Slabs;
Conference_Titel :
Transparent Optical Networks, 2003. Proceedings of 2003 5th International Conference on
Print_ISBN :
0-7803-7816-4
DOI :
10.1109/ICTON.2003.1264610