Title :
Vertical-cavity surface-emitting laser for mid-infrared generation
Author :
Morozov, Yuri ; Nefedov, Igor ; Aleshkin, Vladimir
Author_Institution :
Inst. of Radio Eng. & Electron., Acad. of Sci., Saratov, Russia
fDate :
29 June-3 July 2003
Abstract :
The model of laser making use of GaAs/AlGaAs structure lattice nonlinearity for mid-infrared emission is proposed. Here, two-frequency near-infrared simultaneous oscillations are mixed in vertical-cavity surface-emitting device. The power of mid-infrared emission at wavelength about 10 μm is shown to be 0.1-1 μW in continuous wave operation.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; infrared sources; nonlinear optics; quantum well lasers; semiconductor device models; surface emitting lasers; 0.1 to 1 muW; 10 micron; GaAs-AlGaAs; GaAs/AlGaAs structure lattice nonlinearity; continuous wave operation; mid-infrared emission; mid-infrared generation; quantum well lasers; two-frequency near-infrared simultaneous oscillations; vertical-cavity surface-emitting laser; Artificial intelligence; Frequency; Gallium arsenide; Laser modes; Laser theory; Lattices; Quantum well lasers; Semiconductor lasers; Surface emitting lasers; Vertical cavity surface emitting lasers;
Conference_Titel :
Transparent Optical Networks, 2003. Proceedings of 2003 5th International Conference on
Print_ISBN :
0-7803-7816-4
DOI :
10.1109/ICTON.2003.1264624
