DocumentCode :
403422
Title :
Analytical approach to SF6 breakdown under transient conditions
Author :
Boggs, Steven ; Uchii, Toshiyuki ; Nishiwaki, Susumu
Author_Institution :
Dept. of Electr. Eng. & Phys., Connecticut Univ., CT, USA
Volume :
3
fYear :
2003
fDate :
13-17 July 2003
Abstract :
Summary form only given. Under many circumstances, the initiation of breakdown can be viewed as conversion of energy stored in the electric field (capacitive energy) to thermal energy, which converts matter in a thin channel from a nonconducting state to a conducting plasma. This paper analyzes this process in the context of breakdown in SF6 as a prelude to a second paper which treats the subject of breakdown under highly inhomogeneous thermal field, quasi-homogeneous electric field conditions.
Keywords :
SF6 insulation; electric breakdown; electric fields; gas blast circuit breakers; SF6; SF6 breakdown; breakdown; conducting plasma; electric field; inhomogeneous thermal field; nonconducting state; quasihomogeneous electric field conditions; thermal energy; transient conditions; Computer industry; Dielectric breakdown; Dielectrics and electrical insulation; Electric breakdown; Gas industry; Gas insulation; Physics; Thermal conductivity; Thermal engineering; Transient analysis;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Engineering Society General Meeting, 2003, IEEE
Print_ISBN :
0-7803-7989-6
Type :
conf
DOI :
10.1109/PES.2003.1267462
Filename :
1267462
Link To Document :
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