Title :
The impact of scaling on volume inversion in symmetric double-gate MOSFETs
Author :
Lin, C.-H. ; He, J. ; Xi, X. ; Kam, H. ; Niknejad, A.M. ; Chan, M. ; Hu, C.
Author_Institution :
Dept. of EECS, California Univ., Berkeley, CA, USA
Abstract :
In this paper, 2D and 3D DG structure are simulated by an ISE device simulator. As device scale down, volume inversion is a strong function of substrate doping and channel length. Therefore, an accurate and elaborate volume inversion model is essential for DG compact modeling.
Keywords :
MOSFET; Poisson equation; semiconductor device models; double-gate compact modeling; substrate doping; symmetric double-gate MOSFET; volume inversion model; CMOS technology; Degradation; Doping; Electrons; MOSFET circuits; Semiconductor films; Semiconductor process modeling; Silicon; Substrates; Thickness control;
Conference_Titel :
Semiconductor Device Research Symposium, 2003 International
Print_ISBN :
0-7803-8139-4
DOI :
10.1109/ISDRS.2003.1272036
