DocumentCode
404145
Title
Low-frequency noise characteristics of AlSb/InAsSb HEMTs as a function of temperature and illumination
Author
Kruppa, W. ; Boos, J.B. ; Bennett, B.R. ; Tinkham, B.P.
Author_Institution
Naval Res. Lab., Washington, DC, USA
fYear
2003
fDate
10-12 Dec. 2003
Firstpage
194
Lastpage
195
Abstract
Measurements of the low-frequency noise characteristics of AlSb/InAsSb HEMTs as a function of temperature and illumination are reported in this paper. The primary focus in this paper is on devices in which a digital alloy superlattice of InAs/InSb was used to form an InAsSb channel. This appears to be related to the lower stress in this channel, which is matched to AlSb.
Keywords
III-V semiconductors; aluminium compounds; high electron mobility transistors; indium compounds; semiconductor device measurement; semiconductor device noise; semiconductor superlattices; AlSb-InAsSb; AlSb/InAsSb HEMT; digital alloy superlattice; low-frequency noise; semiconductor device measurement; Frequency; HEMTs; Laboratories; Lighting; Low-frequency noise; MODFETs; Noise measurement; Stress; Temperature dependence; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium, 2003 International
Print_ISBN
0-7803-8139-4
Type
conf
DOI
10.1109/ISDRS.2003.1272057
Filename
1272057
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