Title :
Low-frequency noise characteristics of AlSb/InAsSb HEMTs as a function of temperature and illumination
Author :
Kruppa, W. ; Boos, J.B. ; Bennett, B.R. ; Tinkham, B.P.
Author_Institution :
Naval Res. Lab., Washington, DC, USA
Abstract :
Measurements of the low-frequency noise characteristics of AlSb/InAsSb HEMTs as a function of temperature and illumination are reported in this paper. The primary focus in this paper is on devices in which a digital alloy superlattice of InAs/InSb was used to form an InAsSb channel. This appears to be related to the lower stress in this channel, which is matched to AlSb.
Keywords :
III-V semiconductors; aluminium compounds; high electron mobility transistors; indium compounds; semiconductor device measurement; semiconductor device noise; semiconductor superlattices; AlSb-InAsSb; AlSb/InAsSb HEMT; digital alloy superlattice; low-frequency noise; semiconductor device measurement; Frequency; HEMTs; Laboratories; Lighting; Low-frequency noise; MODFETs; Noise measurement; Stress; Temperature dependence; Voltage;
Conference_Titel :
Semiconductor Device Research Symposium, 2003 International
Print_ISBN :
0-7803-8139-4
DOI :
10.1109/ISDRS.2003.1272057
