Title :
Temperature variation of nonradiative electron transitions in GaInNAs/GaAs SQW investigated by a piezoelectric photothermal spectroscopy
Author :
Ikari, Tetsuo ; Imai, Kenji ; Fukushima, Sin-ichi ; Kondow, Masahiko
Author_Institution :
Dept. of Electr. & Electron. Eng., Miyazaki Univ., Japan
Abstract :
In this paper, we report on the temperature variation of the piezoelectric photothermal spectroscopy (PPTS) of GaInNAs SQW structure with 5 m thickness and discuss the electron transition mechanism in the well from the viewpoint of nonradiative recombination.
Keywords :
III-V semiconductors; energy gap; gallium arsenide; indium compounds; nonradiative transitions; photothermal spectroscopy; semiconductor quantum wells; 5 nm; GaInNAs; GaInNAs/GaAs single quantum well; bad gap; band gap; exciton peak energy; nonradiative electron transitions; nonradiative recombination; piezoelectric photothermal spectroscopy; Absorption; Electron optics; Excitons; Gallium arsenide; Optical distortion; Optical films; Optical sensors; Spectroscopy; Substrates; Temperature dependence;
Conference_Titel :
Semiconductor Device Research Symposium, 2003 International
Print_ISBN :
0-7803-8139-4
DOI :
10.1109/ISDRS.2003.1272072
