Title :
Analytical threshold voltage model for design and evaluation of tri-gate MOSFETs
Author :
Zeng, C. ; Barlage, D.W.
Author_Institution :
Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA
Abstract :
A framework for assessing fundamental device properties of tri-gate device is presented. The dynamics of the threshold voltage calculation is evaluated for the tri-gate architecture of device. Limited comparison to double gate device is also presented.
Keywords :
MOSFET; semiconductor device models; analytical threshold voltage model; double gate device; tri-gate MOSFET design; tri-gate MOSFET evaluation; tri-gate device; Analytical models; Data analysis; Density measurement; Insulation; MOSFETs; Manufacturing processes; Poisson equations; Silicon; Threshold voltage; Transistors;
Conference_Titel :
Semiconductor Device Research Symposium, 2003 International
Print_ISBN :
0-7803-8139-4
DOI :
10.1109/ISDRS.2003.1272075
