Title :
Nonparabolicity and negative differential conductance in tunnelling from metal into 2D channel
Author :
Feiginov, Michael
Author_Institution :
Technische Univ. Darmstadt, Germany
Abstract :
In this paper a mechanism of inherent negative differential conductance (NDC) in the structures with tunnelling from metal into 2D channel has been proposed. The narrow 2D channel in the structures is formed by a steep narrow Schottky barriers on one side and a heterojunction on other side. The channel is partly filled with electrons and conductive due to a heavy n-doping close to the heterojunction. The nonparabolicity effects in such structures are also discussed.
Keywords :
Fermi level; Schottky barriers; negative resistance; p-n heterojunctions; tunnelling; 2D channel; Fermi level; NDC; Schottky barriers; heavy n doping; heterojunction; negative differential conductance; nonparabolicity; tunnelling; Educational programs; Electrons; Gallium arsenide; Gallium nitride; Heterojunctions; Photonic band gap; Schottky barriers; Tunneling; US Government;
Conference_Titel :
Semiconductor Device Research Symposium, 2003 International
Print_ISBN :
0-7803-8139-4
DOI :
10.1109/ISDRS.2003.1272079
