Title :
Insulated gate III-N devices and ICs
Author :
Simin, G. ; Adivarahan, V. ; Fatima, H. ; Saygi, S. ; Koudymov, A. ; He, X. ; Shuai, W. ; Rai, S. ; Yang, J. ; Khan, M.Asif ; Tarakji, A. ; Deng, J. ; Gaska, R. ; Shur, M.S.
Author_Institution :
Dept. of Electr. Eng., South Carolina Univ., Columbia, SC, USA
Abstract :
The MOSHFET design which combines the advantage of the MOS structure, which suppresses the gate leakage current, and an AlGaN/GaN heterointerface that provides high density, high mobility two-dimensional electron gas channel. This article presents a comparative review of the I-V characteristics, cut-off frequencies, RF output powers, power gain, and nonlinear distortions of AlGaN/GaN MOSHFET, and HFET device. The MOSHFETs possess significant advantages for the monolitic IC design. They sustain very high input impedance at elevated temperatures, even above 300 °C. The results show that the MOSHFET based ICs are extremely promising for a large variety of high-power high-temperature applications.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; insulated gate field effect transistors; integrated circuit design; monolithic integrated circuits; nonlinear distortion; power MOSFET; wide band gap semiconductors; AlGaN-GaN; AlGaN/GaN heterointerface; I-V characteristics; MOS structure; MOSHFET design; RF output powers; cut-off frequencies; gate leakage current; high density 2D electron gas channel; high mobility electron gas channel; high power high temperature applications; input impedance; metal oxide semiconductor heterostructure field effect transistor; monolitic IC design; nonlinear distortions; power gain; Aluminum gallium nitride; Cutoff frequency; Electron mobility; Gallium nitride; Insulation; Leakage current; MOSHFETs; Nonlinear distortion; Power generation; Radio frequency;
Conference_Titel :
Semiconductor Device Research Symposium, 2003 International
Print_ISBN :
0-7803-8139-4
DOI :
10.1109/ISDRS.2003.1272152
