Maskless fabrication of JFETs via focused ion beams

Author

De Marco, Anthony J. ; Melngailis, John

Author_Institution

Dept. of Electr. Comput. Eng., Maryland Univ., College Park, MD, USA

fYear

2003

fDate

10-12 Dec. 2003

Firstpage

426

Lastpage

427

Abstract

The creation of active devices utilizing solely FIB fabrication is investigated in this paper. JFETs are constructed using FIB techniques on a mesa of n-type silicon situated atop a layer of silicon dioxide. The source and drain regions are implanted using a beam of singly-charged arsenic ions accelerated to 120 kV. The gate is implanted with singly-charged boron ions at 10 kV. The source, gate, and drain contacts are directly written by FIB using a 30 kV gallium ion beam. FIB deposited platinum forms an ohmic contact to heavily doped silicon, with an average contact resistance of 9.17×10^-3 Ω-cm². The CV characteristics of JFET with FIB-fabricated dopants and contacts are illustrated.

Keywords

contact resistance; elemental semiconductors; focused ion beam technology; junction gate field effect transistors; ohmic contacts; platinum; semiconductor technology; silicon; 10 kV; 120 kV; 30 kV; FIB deposited platinum; JFET; Pt; Si; focused ion beams; gallium ion beam; heavily doped silicon; junction field effect transistors; maskless fabrication; ohmic contact; singly charged arsenic ions; singly charged boron ions; Acceleration; Boron; Contact resistance; Fabrication; Ion beams; JFETs; Ohmic contacts; Particle beams; Platinum; Silicon compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2003 International

Print_ISBN

0-7803-8139-4

Type

conf

DOI

10.1109/ISDRS.2003.1272165

Filename

1272165