Comparing options for "ultimate" scale SOI MOSFETs

The goal of this paper was a comparative study of two double-gate MOSFETs, one is a transistor with raised ("elevated") electrodes and the other is a device with extensions of the source and drain. In the "raised-electrode" transistors the carrier scattering from the drain back into the 2D Si channel is negligible, while in transistors with thin electrode extensions it is stronger. On the other hand, in transistors with elevated electrodes, the control of the electrostatic potential of the channel by the gates is somewhat weaker than in the model with extensions, because in the former case the gates do not fully encompass the channel region.