Title :
Compact models for silicon carbide power devices
Author :
McNutt, Ty ; Hefner, Allen ; Mantooth, Alan ; Berning, David ; Singh, Ranbir
Author_Institution :
Arkansas Univ., Fayetteville, AR, USA
Abstract :
In order for circuit designers to fully utilize the advantages of the new SiC power device technologies, compact models are needed in circuit and system simulation tools. Models of silicon carbide power device characteristics were presented in this paper. Physics based models of VDMOSFET, output characteristics and switching vs gate resistance characteristics of SiC DiMOSFET were presented in this paper.
Keywords :
power MOSFET; semiconductor device models; silicon compounds; wide band gap semiconductors; SiC; SiC DiMOSFET; VDMOSFET; silicon carbide power device; silicon carbide power devices modeling; simulation; switching gate resistance; Breakdown voltage; Epitaxial layers; MOSFETs; Power system modeling; Predictive models; Semiconductor process modeling; Silicon carbide; Surface resistance; Temperature dependence; Transconductance;
Conference_Titel :
Semiconductor Device Research Symposium, 2003 International
Print_ISBN :
0-7803-8139-4
DOI :
10.1109/ISDRS.2003.1272197
