DocumentCode :
404180
Title :
A modeling of the optical properties of the zinc oxide-zinc magnesium oxide double barrier system
Author :
Krokidis, G. ; Xanthakis, J.P. ; Iliadis, A.A.
Author_Institution :
Dept. of Electr. & Comput. Eng., NTUA, Athens, Greece
fYear :
2003
fDate :
10-12 Dec. 2003
Firstpage :
474
Lastpage :
475
Abstract :
This article investigates the correlation between the optical and transport properties of zinc oxide-zinc magnesium oxide double barrier system by investigating the localization of the energy levels in the quantum well. Effective mass approach is used to investigate this system. The degree of localization of the levels in the quantum well is also examined with respect to the width of the ZnMgO barriers. The energy bands for ZnO/Zn0.8Mg0.2O structure is also studied.
Keywords :
II-VI semiconductors; band structure; effective mass; luminescence; magnesium compounds; semiconductor quantum wells; zinc compounds; ZnMgO barriers; ZnO-ZnMgO; degree of localization; effective mass method; energy bands; energy levels; optical properties; quantum well; transport properties; zinc oxide-zinc magnesium oxide double barrier system; Effective mass; Electrons; Laser excitation; Magnesium oxide; Optical computing; Optical materials; Quantum computing; Quantum well lasers; Stimulated emission; Zinc oxide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Device Research Symposium, 2003 International
Print_ISBN :
0-7803-8139-4
Type :
conf
DOI :
10.1109/ISDRS.2003.1272199
Filename :
1272199
Link To Document :
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