Title :
Optimization of the CuPc active layer thickness of static induction transistors
Author :
Joseph, C.M. ; Nakamura, M. ; Iizuka, M. ; Kudo, K.
Author_Institution :
Dept. of Electron. & Mech. Eng., Chiba Univ., Japan
Abstract :
Static induction transistors find application in various organic devices owing to their low voltage and high current operation. Devices with layered structure consisting of Au(drain)/CuPc/Al(gate)/CuPc/ITO(source)/glass have been prepared. We report the static characteristics of devices with different edge features for the Al gate electrode. It is found that the geometry of the Al gate and the CuPc (copper phthalocyanine) active layer strongly affects the device properties. Devices of which the Al gate has been deposited with a spacer between the mask and the substrate show SIT characteristics and those without a spacer with a sharp edge for the Al gate show ohmic characteristics with no gate-effect, indicating that a thin transparent edge is necessary for the Al gate electrode to obtain SIT characteristics, resulting in the modulation of the drain current with the applied gate voltages.
Keywords :
aluminium; copper compounds; glass; gold; indium compounds; optimisation; organic semiconductors; static induction transistors; substrates; tin compounds; Al; Au; ITO; ITO source electrode; InSnO; SIT characteristics; active layer thickness optimization; aluminium gate electrode; copper phthalocyanine; drain current; glass substrate; gold drain electrode; ohmic characteristics; organic devices; organic semiconductors; static characteristics; static induction transistors; Artificial intelligence; Copper; Electrodes; Geometry; Glass; Low voltage; Mechanical engineering; Shape control; Temperature; Thin film transistors;
Conference_Titel :
TENCON 2003. Conference on Convergent Technologies for the Asia-Pacific Region
Print_ISBN :
0-7803-8162-9
DOI :
10.1109/TENCON.2003.1273239