An integrated SiGe RF bandpass low noise amplifier for multi-band wireless communication applications

Author

Shouxian, Mou ; Jianguo, Ma ; Seng, Yeo Kiat ; Anh, Do Manh

Author_Institution

Center for Integrated Circuits & Syst., Nanyang Technol. Univ., Singapore

Volume

1

fYear

2003

fDate

21-24 Sept. 2003

Firstpage

420

Abstract

A dual-band low noise amplifier (LNA) based on IBM SiGe 0.25 μm BiCMOS technology is presented in this paper. It is able to work simultaneously at two different frequency bands: 935 MHz-960 MHz and 1.8 GHz-2.5 GHz, which cover the communication standards of GSM900/1800, DECT, PHS, PCS, 3G mobile and the Bluetooth as well as IEEE802.11b/g (WI-FI/WI-FI5). Comparing with GaAs devices, the proposed LNA has lower cost and better integration feasibility.

Keywords

3G mobile communication; BiCMOS integrated circuits; Bluetooth; III-V semiconductors; UHF amplifiers; cellular radio; gallium arsenide; germanium; silicon; 3G mobile; BiCMOS technology; Bluetooth; GSM900; GaAs; IEEE802.11b/g; RF bandpass; SiGe; low noise amplifier; multi-band wireless communication; BiCMOS integrated circuits; Communication standards; Dual band; Germanium silicon alloys; Low-noise amplifiers; Personal communication networks; Radio frequency; Radiofrequency amplifiers; Silicon germanium; Wireless communication;

fLanguage

English

Publisher

ieee

Conference_Titel

Communications, 2003. APCC 2003. The 9th Asia-Pacific Conference on

Print_ISBN

0-7803-8114-9

Type

conf

DOI

10.1109/APCC.2003.1274388

Filename

1274388