Title :
Infrared reflectance studies of GaN grown on sapphire by metalorganic chemical vapour deposition
Author :
Feng, Zhe Chuan ; Ferguson, Ian T. ; Hou, Yong Tian ; Yang, Tzuen Rong
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
Abstract :
Infrared reflectance of GaN grown on sapphire by metalorganic vapour deposition has been studied theoretically/experimentally. Comprehensive theoretical calculations have been made and compared with experimental data, evidencing a good technique for characterising GaN epilayers.
Keywords :
III-V semiconductors; MOCVD; gallium compounds; infrared spectra; organometallic compounds; reflectivity; sapphire; semiconductor epitaxial layers; GaN epilayer; GaN grown on sapphire; GaN-Al2O3; infrared reflectance; metalorganic chemical vapour deposition; Chemical vapor deposition; Dielectrics; Frequency; Gallium nitride; Infrared spectra; Lattices; MOCVD; Optical films; Phonons; Reflectivity;
Conference_Titel :
Lasers and Electro-Optics, 2003. CLEO/Pacific Rim 2003. The 5th Pacific Rim Conference on
Print_ISBN :
0-7803-7766-4
DOI :
10.1109/CLEOPR.2003.1274503
