Title :
Luminescence efficiency of InGaN-based multiple quantum well UV-LEDS
Author :
Pan, Chang-Chi ; Lee, Chia-Ming ; Hsu, Wen-Jay ; Chen, Guan-Ting ; Chyi, Jen-Inn
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Chung-li, Taiwan
Abstract :
Luminescence efficiency of ultraviolet light-emitting diodes (UV-LEDs) is investigated using electroluminescence measurements. The effects of thermal and layer structure on the external quantum efficiency at different current densities are discussed and clarified.
Keywords :
III-V semiconductors; electroluminescence; light emitting diodes; quantum well devices; semiconductor quantum wells; ultraviolet detectors; wide band gap semiconductors; InGaN; current density; electroluminescence measurement; luminescence efficiency; quantum efficiency; quantum well UV-LEDS; thermal effect; ultraviolet light-emitting diodes; Current density; Electroluminescence; Light emitting diodes; Luminescence; Power generation; Thermal degradation; Thermal factors;
Conference_Titel :
Lasers and Electro-Optics, 2003. CLEO/Pacific Rim 2003. The 5th Pacific Rim Conference on
Print_ISBN :
0-7803-7766-4
DOI :
10.1109/CLEOPR.2003.1274539
