Title :
Fabrication of periodically-inverted GaAs for quasi-phase-matching nonlinear optical devices
Author :
Matsushita, Tomonori ; Tachibana, Hiroaki ; Koh, Shinji ; Kondo, Takashi
Author_Institution :
Dept. of Mater. Sci., Tokyo Univ., Japan
Abstract :
A process developed for fabricating high-quality periodically-inverted GaAs waveguides based on sublattice reversal epitaxy and regrowth technique is presented. By using this process, we can fabricate low-loss GaAs wavelength conversion devices with ∼ 6 μm QPM periods.
Keywords :
III-V semiconductors; epitaxial growth; gallium arsenide; optical fabrication; optical phase matching; optical waveguides; optical wavelength conversion; GaAs; GaAs waveguides; GaAs wavelength conversion; fabrication; nonlinear optical devices; periodically-inverted GaAs; quasi-phase-matching; regrowth technique; sublattice reversal epitaxy technique; Corrugated surfaces; Epitaxial growth; Gallium arsenide; Material properties; Materials science and technology; Nanoscale devices; Nanostructured materials; Nonlinear optical devices; Optical device fabrication; Optical waveguides;
Conference_Titel :
Lasers and Electro-Optics, 2003. CLEO/Pacific Rim 2003. The 5th Pacific Rim Conference on
Print_ISBN :
0-7803-7766-4
DOI :
10.1109/CLEOPR.2003.1274546
