Femtosecond pump-probe studies on carrier dynamics in InGaN/GaN quantum wells with indium aggregated quantum dot structures

Author

Wang, Hsiang-Chen ; Tsai, Cheng-Yeh ; Cheng, Yung-Chen ; Lin, En-Chiang ; Feng, Shih-Wei ; Yang, C.C. ; Ma, Kung-Jen ; Kuo, Cheng-Ta ; Tsang, Jian-Shihn

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan

Volume

1

fYear

2003

fDate

15-19 Dec. 2003

Abstract

Temperature-dependent pump-probe measurements were conducted for observing the process of carrier relaxation into localized states of quantum dots, which were formed through indium aggregation in InGaN/GaN quantum well structures of various parameters.

Keywords

III-V semiconductors; aggregation; carrier relaxation time; gallium compounds; high-speed optical techniques; indium compounds; localised states; optical pumping; semiconductor quantum dots; semiconductor quantum wells; wide band gap semiconductors; InGaN-GaN; InGaN/GaN quantum wells; aggregation; carrier dynamics; carrier relaxation; femtosecond pump-probe study; indium; localized states; quantum dot structures; temperature-dependent pump-probe measurement; Annealing; Gallium nitride; Indium; Phonons; Probes; Quantum dots; Quantum mechanics; Temperature distribution; US Department of Transportation; Ultrafast electronics;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2003. CLEO/Pacific Rim 2003. The 5th Pacific Rim Conference on

Print_ISBN

0-7803-7766-4

Type

conf

DOI

10.1109/CLEOPR.2003.1274552

Filename

1274552