Title :
Femtosecond carrier dynamics in InGaAsN single quantum well
Author :
Hsieh, Chia-Lung ; Liu, Tzu-Ming ; Tien, Ming-Chun ; Sun, Chi-Kuang ; Sung, Li-Wei ; Lin, Hao-Hsiung
Author_Institution :
Graduate Inst. of Electro-Opt. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
Femtosecond carrier dynamics in InGaAsN single quantum well were studied for the first time. Pump-probe measurement shows the enhanced free carrier absorption due to highly excited carriers with a delayed carrier cooling time around 2∼3.7ps.
Keywords :
III-V semiconductors; gallium arsenide; high-speed optical techniques; indium compounds; quantum well lasers; InGaAsN; cooling time; delayed carrier; enhanced free carrier absorption; excited carriers; femtosecond carrier dynamics; pump-probe measurement; quantum wells; Absorption; Curve fitting; Deconvolution; Delay effects; Gallium arsenide; Optical pulses; Photonic band gap; Solids; Ultrafast electronics; Ultrafast optics;
Conference_Titel :
Lasers and Electro-Optics, 2003. CLEO/Pacific Rim 2003. The 5th Pacific Rim Conference on
Print_ISBN :
0-7803-7766-4
DOI :
10.1109/CLEOPR.2003.1274553
