DocumentCode
405328
Title
Femtosecond carrier dynamics in InGaAsN single quantum well
Author
Hsieh, Chia-Lung ; Liu, Tzu-Ming ; Tien, Ming-Chun ; Sun, Chi-Kuang ; Sung, Li-Wei ; Lin, Hao-Hsiung
Author_Institution
Graduate Inst. of Electro-Opt. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Volume
1
fYear
2003
fDate
15-19 Dec. 2003
Abstract
Femtosecond carrier dynamics in InGaAsN single quantum well were studied for the first time. Pump-probe measurement shows the enhanced free carrier absorption due to highly excited carriers with a delayed carrier cooling time around 2∼3.7ps.
Keywords
III-V semiconductors; gallium arsenide; high-speed optical techniques; indium compounds; quantum well lasers; InGaAsN; cooling time; delayed carrier; enhanced free carrier absorption; excited carriers; femtosecond carrier dynamics; pump-probe measurement; quantum wells; Absorption; Curve fitting; Deconvolution; Delay effects; Gallium arsenide; Optical pulses; Photonic band gap; Solids; Ultrafast electronics; Ultrafast optics;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2003. CLEO/Pacific Rim 2003. The 5th Pacific Rim Conference on
Print_ISBN
0-7803-7766-4
Type
conf
DOI
10.1109/CLEOPR.2003.1274553
Filename
1274553
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