Optical beam induced current microscopy at DC and radiofrequency

Author

Kao, Fu-Jen ; Chen, Jimcheng ; Huang, Sheng-Lung

Author_Institution

Dept. of Phys., Nat. Sun Yat-Sen Univ., Kaohsiung, Taiwan

Volume

1

fYear

2003

fDate

15-19 Dec. 2003

Abstract

In this paper we have made a comparison of optical beam induced current (OBIC) imaging with DC and radiofrequency (RF) contrast on a photodetector. The DC and RF contrasts are generated by a cw argon-krypton ion laser and a mode-locked Ti:sapphire laser, respectively. We have found that OBIC mapping at RF would allow profiling of the device´s spatial distribution of temporal response. Thus the use of a pulsed laser in OBIC would contribute one more dimension in semiconductor device metrology.

Keywords

OBIC; argon; ion lasers; krypton; laser mode locking; laser modes; optical images; optical microscopy; optical pulse generation; photodetectors; sapphire; semiconductor device measurement; titanium; Al₂O₃: Ti; Ar; Kr; OBIC imaging; OBIC mapping; RF contrasts; argon-krypton ion laser; mode-locked Ti:sapphire laser; optical beam induced current; optical microscopy; photodetector; pulsed laser; radio frequency contrast; semiconductor device metrology; spatial distribution; temporal response; DC generators; Laser mode locking; Optical beams; Optical imaging; Optical microscopy; Optical pulses; Photodetectors; Radio frequency; Semiconductor devices; Semiconductor lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2003. CLEO/Pacific Rim 2003. The 5th Pacific Rim Conference on

Print_ISBN

0-7803-7766-4

Type

conf

DOI

10.1109/CLEOPR.2003.1274554

Filename

1274554