Title :
Effect of wide band gap enhancement capping layer on MSM-PDs
Author :
Lee, Hsin-Ying ; Lee, Ching-Ting
Author_Institution :
Inst. of Opt. Sci., Nat. Central Univ., Chung-li, Taiwan
Abstract :
The effect of the wide bandgap Schottky barrier enhancement-capping layer on the performance of metal-semiconductor-metal photodetectors (MSM-PDs) is presented. We also measured the relationship between the photoresponsivity and difference photon wavelength.
Keywords :
Schottky barriers; metal-semiconductor-metal structures; photodetectors; semiconductor-metal boundaries; wide band gap semiconductors; Schottky barrier; capping layer; metal-semiconductor-metal photodetectors; photon wavelength; photoresponsivity; wide band gap enhancement; Absorption; Buffer layers; Dark current; Gallium arsenide; Gold; Optical buffering; Photodetectors; Photonic band gap; Schottky barriers; Wideband;
Conference_Titel :
Lasers and Electro-Optics, 2003. CLEO/Pacific Rim 2003. The 5th Pacific Rim Conference on
Print_ISBN :
0-7803-7766-4
DOI :
10.1109/CLEOPR.2003.1274579
