DocumentCode :
405355
Title :
Electroluminescence from Ag-treated porous silicon templates
Author :
Heisig, Sven ; Maeda, Ryutaro
Author_Institution :
Inst. of Mech. Syst. Eng., Nat. Inst. of Adv. Ind. Sci. & Technol. (AIST), Ibaraki, Japan
Volume :
1
fYear :
2003
fDate :
15-19 Dec. 2003
Abstract :
We present a method to improve and stabilize electroluminescence from porous silicon. The electrical breakdown power increases by a factor of more than 25. The electroluminescence intensity is about 30 times higher compared to untreated samples.
Keywords :
electric breakdown; electrodeposition; electroluminescence; elemental semiconductors; porous semiconductors; silicon; silver; stability; Ag; Ag-treatment; Si; electrical breakdown power; electroluminescence; porous silicon template; Electric breakdown; Electroluminescence; Indium tin oxide; Light emitting diodes; Luminescence; Optical films; Silicon; Silver; Stability; Stimulated emission;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 2003. CLEO/Pacific Rim 2003. The 5th Pacific Rim Conference on
Print_ISBN :
0-7803-7766-4
Type :
conf
DOI :
10.1109/CLEOPR.2003.1274583
Filename :
1274583
Link To Document :
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