DocumentCode
405389
Title
High efficiency CW operation of 1.53 μm vertical cavity surface emitting laser on InP
Author
Nishiyama, N. ; Caneau, C. ; Guryanoc, G. ; Liu, X.S. ; Hu, M. ; Zah, C.E.
Author_Institution
Corning Inc., NY, USA
Volume
1
fYear
2003
fDate
15-19 Dec. 2003
Abstract
High efficiency continuous wave operation of 1.53 μm vertical-cavity surface-emitting lasers (VCSELs) grown by MOCVD has been demonstrated. Devices show a high differential quantum efficiency of 46% and a single-mode power of 1 mW.
Keywords
III-V semiconductors; MOCVD; indium compounds; surface emitting lasers; 1 mW; 1.53 micron; InP; MOCVD; VCSEL; differential quantum efficiency; single-mode power; vertical cavity surface emitting laser continuous wave operation; Diode lasers; Electrons; Indium phosphide; Power generation; Semiconductor lasers; Surface emitting lasers; Surface waves; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2003. CLEO/Pacific Rim 2003. The 5th Pacific Rim Conference on
Print_ISBN
0-7803-7766-4
Type
conf
DOI
10.1109/CLEOPR.2003.1274620
Filename
1274620
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