• DocumentCode
    405394
  • Title

    Growth and characterization of 850 nm InGaAsP/InGaP strain-compensated VCSELs by MOCVD

  • Author

    Kuo, H.C. ; Lu, T.C. ; Chang, Y.S. ; Lai, F.Y. ; Kao, G.C. ; Laih, L.H. ; Wang, S.C.

  • Author_Institution
    Inst. of Electro-opt. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
  • Volume
    1
  • fYear
    2003
  • fDate
    15-19 Dec. 2003
  • Abstract
    In this paper, we demonstrate the growth and characterization of 850 nm oxide-confined VCSELs utilizing In0.18Ga0.82P0.2/ln0.4Ga0.6P strain-compensated SC-MQWs by MOCVD. The VCSELs show very low threshold current good temperature performance, and high modulation response up to 12.5 Gb/s from 25C to 85C.
  • Keywords
    III-V semiconductors; MOCVD; gallium arsenide; gallium compounds; indium compounds; optical modulation; surface emitting lasers; 12.5 Gbit/s; 25 to 85 C; 850 nm; InGaAsP-InGaP; InGaAsP-InGaP strain-compensated VCSEL growth; MOCVD; low threshold current good temperature performance; modulation response; oxide-confined VCSEL characterization; Apertures; Extinction ratio; Frequency modulation; Gallium arsenide; Local area networks; MOCVD; Surface emitting lasers; Temperature; Threshold current; Vertical cavity surface emitting lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics, 2003. CLEO/Pacific Rim 2003. The 5th Pacific Rim Conference on
  • Print_ISBN
    0-7803-7766-4
  • Type

    conf

  • DOI
    10.1109/CLEOPR.2003.1274626
  • Filename
    1274626
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=405394