Title :
Two-photon optical beam induced current imaging of indium gallium nitride blue LEDs
Author :
Kao, Fu-Jen ; Huang, Mao-Kuo ; Wang, Yung-Shun ; Huang, Sheng-Lung ; Sun, Chi-Kuang
Author_Institution :
Dept. of Phys., Nat. Sun Yat-Sen Univ., Kaohsiung, Taiwan
Abstract :
In this study, InGaN light emitting diodes (LEDs) are characterized by optical beam induced current (OBIC) and photoluminescence laser scanning microscopy through two-photon excitation. Light scattering and absorption in the packaging material and the p-doped top layer of the LEDs are greatly reduced as a result of employing longer excitation wavelength with energy less than the band gap of the top p-layer. When compared with single photon OBIC, two-photon OBIC imaging not only exhibits superior image quality but also reveals more clearly the characteristics of the epilayers focused on.
Keywords :
III-V semiconductors; OBIC; gallium compounds; indium compounds; light absorption; light emitting diodes; light scattering; optical microscopy; photoluminescence; two-photon processes; wide band gap semiconductors; InGaN; blue LEDs; indium gallium nitride; light absorption; light emitting diodes; light scattering; optical beam induced current; p-doping; packaging material; photoluminescence laser scanning microscopy; two-photon excitation; Gallium nitride; III-V semiconductor materials; Indium; Laser excitation; Light emitting diodes; Light scattering; Optical beams; Optical imaging; Optical microscopy; Photoluminescence;
Conference_Titel :
Lasers and Electro-Optics, 2003. CLEO/Pacific Rim 2003. The 5th Pacific Rim Conference on
Print_ISBN :
0-7803-7766-4
DOI :
10.1109/CLEOPR.2003.1274654
