Title :
Postgrowth wavelength tuning of InGaAsP/InP multiple quantum wells using dielectric-cap disordering
Author :
Chou, Tao-Wei ; Lai, Chun-Hung ; Lin, Chia-Hsuan ; Wang, T.J. ; Tsai, W.H. ; Yee, H.H.
Author_Institution :
Inst. of Electro-Opt. Eng., Nat. Taipei Univ. of Technol., Taiwan
Abstract :
Impurity-free quantum well disordering has been used for the wavelength tuning of strained InGaAsP/InP multiple-quantum-well (MQW) structures. By implementing different kinds of dielectric caps, damage enhanced and thermally induced quantum well intermixing were carried out for the bandgap engineering of the MQW after wafer growth. Two different combinations of the dielectric capping were selected for extended-cavity laser fabrication to evaluate the effects of quantum well disordering.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; optical fabrication; optical materials; quantum well lasers; semiconductor quantum wells; InGaAsP-InP; dielectric-cap disordering; extended-cavity laser fabrication; impurity-free quantum well disordering; multiple quantum wells; postgrowth wavelength tuning; quantum well intermixing; Dielectrics; Indium phosphide; Laser tuning; Optical waveguides; Photonic band gap; Plasma temperature; Quantum well devices; Rapid thermal annealing; Rapid thermal processing; Waveguide lasers;
Conference_Titel :
Lasers and Electro-Optics, 2003. CLEO/Pacific Rim 2003. The 5th Pacific Rim Conference on
Print_ISBN :
0-7803-7766-4
DOI :
10.1109/CLEOPR.2003.1274685
