Postgrowth wavelength tuning of InGaAsP/InP multiple quantum wells using dielectric-cap disordering

Author

Chou, Tao-Wei ; Lai, Chun-Hung ; Lin, Chia-Hsuan ; Wang, T.J. ; Tsai, W.H. ; Yee, H.H.

Author_Institution

Inst. of Electro-Opt. Eng., Nat. Taipei Univ. of Technol., Taiwan

Volume

1

fYear

2003

fDate

15-19 Dec. 2003

Abstract

Impurity-free quantum well disordering has been used for the wavelength tuning of strained InGaAsP/InP multiple-quantum-well (MQW) structures. By implementing different kinds of dielectric caps, damage enhanced and thermally induced quantum well intermixing were carried out for the bandgap engineering of the MQW after wafer growth. Two different combinations of the dielectric capping were selected for extended-cavity laser fabrication to evaluate the effects of quantum well disordering.

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; optical fabrication; optical materials; quantum well lasers; semiconductor quantum wells; InGaAsP-InP; dielectric-cap disordering; extended-cavity laser fabrication; impurity-free quantum well disordering; multiple quantum wells; postgrowth wavelength tuning; quantum well intermixing; Dielectrics; Indium phosphide; Laser tuning; Optical waveguides; Photonic band gap; Plasma temperature; Quantum well devices; Rapid thermal annealing; Rapid thermal processing; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2003. CLEO/Pacific Rim 2003. The 5th Pacific Rim Conference on

Print_ISBN

0-7803-7766-4

Type

conf

DOI

10.1109/CLEOPR.2003.1274685

Filename

1274685