DocumentCode :
405487
Title :
1.3 μm light emission from Al2O3/Si1-xGex/Si MOS tunnel diodes
Author :
Lin, C.Y. ; Lee, H.Y. ; Chin, Albert ; Hou, Y.T. ; Li, M.F. ; McAlister, S.P. ; Kwong, D.L.
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Volume :
1
fYear :
2003
fDate :
15-19 Dec. 2003
Abstract :
Light emission at ∼1.3 μm was measured at room temperature in Al2O3/Si1-xGex MOS tunnel diodes on Si substrates. The merits of using Si1-xGex in MOS light-emitting devices is that they can be embedded in a CMOS process, and have good efficiency (with photon energy \n\n\t\t
Keywords :
MIS devices; alumina; elemental semiconductors; energy gap; germanium; light emitting diodes; photoluminescence; silicon; tunnel diodes; 1.3 micron; 293 to 298 K; Al2O3-Si1-xGex-Si MOS tunnel diodes; Al2O3-SiGe; CMOS process; MOS light-emitting devices; Si; light emission; photon energy; Diodes; Effective mass; Germanium silicon alloys; Indium tin oxide; MOSFET circuits; Quantization; Silicon germanium; Superlattices; Temperature; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 2003. CLEO/Pacific Rim 2003. The 5th Pacific Rim Conference on
Print_ISBN :
0-7803-7766-4
Type :
conf
DOI :
10.1109/CLEOPR.2003.1274726
Filename :
1274726
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=405487
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