Title :
Enhanced PL of high density (≈4.7×1011/cm2) InAs QDs by using graded interface of GaAs/AlAs/GaAs
Author :
Park, S.K. ; Tatebayashi, J. ; Arakawa, Y.
Author_Institution :
Inst. of Ind. Sci., Tokyo Univ., Japan
Abstract :
We have achieved an enhanced PL of high density (≈4.7×1011/cm2) InAs QDs by using graded interface of GaAs/AlAs/GaAs. The graded interface applied for the purpose of improving surface state helps to obtain high intensity PL spectra of InAs QDs. With increasing the number of graded interface, the intensity of PL emitted from InAs QDs is increased. From the results, we conclude that the graded interface is a key point of fabricating devices, which have high optical properties.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; optical fabrication; photoluminescence; semiconductor quantum dots; GaAs-AlAs-GaAs; InAs; enhanced PL; graded interface; high density InAs QD; Gallium arsenide; Optical surface waves; Quantum dots; Temperature dependence;
Conference_Titel :
Lasers and Electro-Optics, 2003. CLEO/Pacific Rim 2003. The 5th Pacific Rim Conference on
Print_ISBN :
0-7803-7766-4
DOI :
10.1109/CLEOPR.2003.1274730
