Title :
GaN based white LED
Author :
Kato, Hisaki ; Uemura, Toshiya ; Shibata, Naoki ; Yamaguchi, Hisao ; Yasukawa, Takemasa
Author_Institution :
Toyoda Gosei Co. Ltd., Aichi, Japan
Abstract :
We have developed the new type GaN based white LEDs utilizing a combination of short wavelength LEDs and phosphors, which have a high color rendering index and high luminous intensity.
Keywords :
III-V semiconductors; colour displays; gallium compounds; light emitting diodes; luminescence; phosphors; wide band gap semiconductors; GaN; GaN-based white LED; high color rendering index; high luminous intensity; phosphors; short wavelength LED; Buffer layers; Diode lasers; Epitaxial growth; Epitaxial layers; Gallium nitride; Light emitting diodes; Phosphors; Photonic band gap; Substrates; Temperature;
Conference_Titel :
Lasers and Electro-Optics, 2003. CLEO/Pacific Rim 2003. The 5th Pacific Rim Conference on
Print_ISBN :
0-7803-7766-4
DOI :
10.1109/CLEOPR.2003.1274797
