Title :
Low-threshold lasing of optically pumped InGaN vertical-cavity surface-emitting lasers with dielectric mirrors
Author :
Tawara, Takehiko ; Gotoh, Hideki ; Akasaka, Tetsuya ; Kobayashi, Naoki ; Saitoh, Tadashi
Author_Institution :
NTT Basic Res. Labs., NTT Corp., Kanagawa, Japan
Abstract :
III-nitride VCSELs are fabricated by removing SiC substrate from the Ill-nitride cavity, and subsequent wafer bonding of the cavity and DBRs. Low-threshold lasing action in InGaN VCSELs with dielectric DBRs is observed at room temperature by optical pumping.
Keywords :
dielectric devices; distributed Bragg reflectors; gallium compounds; indium compounds; laser cavity resonators; optical fabrication; optical pumping; silicon compounds; surface emitting lasers; wafer bonding; wide band gap semiconductors; 293 to 298 K; III-nitride VCSEL fabrication; Ill-nitride cavity; InGaN; SiC; SiC substrate removal; dielectric DBR; dielectric mirrors; low-threshold lasing; optically pumped InGaN vertical-cavity surface-emitting lasers; wafer bonding; Dielectric substrates; Laser excitation; Mirrors; Optical pumping; Pump lasers; Silicon carbide; Surface emitting lasers; Temperature; Vertical cavity surface emitting lasers; Wafer bonding;
Conference_Titel :
Lasers and Electro-Optics, 2003. CLEO/Pacific Rim 2003. The 5th Pacific Rim Conference on
Print_ISBN :
0-7803-7766-4
DOI :
10.1109/CLEOPR.2003.1274798
