High-quality InN grown by rf-plasma assisted molecular beam epitaxy as novel materials for optical communication

Author

Kawai, Mime ; Kikuchi, Akihiko ; Kishino, Katsumi

Author_Institution

Dept. of Electr. & Electron. Eng., Sophia Univ., Tokyo, Japan

Volume

1

fYear

2003

fDate

15-19 Dec. 2003

Abstract

High quality InN films were grown by rf-plasma assisted molecular beam epitaxy. The fundamental bandgap was evaluated to be 0.7 eV. The room temperature photoluminescence (PL) intensity was improved with the narrow PL-FWHM of 88 meV by optimizing the V/III supply ratio and buffer layer. This result suggests that InN is a new attractive material for optical devices in the optical communication wavelength.

Keywords

energy gap; indium compounds; molecular beam epitaxial growth; optical communication equipment; optical films; photoluminescence; semiconductor thin films; wide band gap semiconductors; 0.7 eV; 293 to 298 K; 88 meV; InN; bandgap evaluation; buffer layer; high-quality InN growth; narrow PL-FWHM; optical communication; optical communication wavelength; optical devices; rf-plasma assisted molecular beam epitaxy; room temperature photoluminescence intensity; Absorption; Buffer layers; Charge carrier density; Gallium nitride; Molecular beam epitaxial growth; Optical fiber communication; Optical films; Optical materials; Photonic band gap; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2003. CLEO/Pacific Rim 2003. The 5th Pacific Rim Conference on

Print_ISBN

0-7803-7766-4

Type

conf

DOI

10.1109/CLEOPR.2003.1274799

Filename

1274799