DocumentCode
405574
Title
Magnetic-field dependence of THz-radiation from femto-second-laser irradiated InAs up to 27 T
Author
Takahashi, Hiroshi ; Suzuki, Yuji ; Quema, Alex ; Yoshioka, Ryoichiro ; Ono, Shingo ; Sarukura, N. ; HOSOMIZU, Masato ; Tsukamoto, Takeyo ; SAITO, Shingo ; SAKAI, Kiyomi ; Nishijima, Gen ; Watanabe, K.
Author_Institution
Dept. of Photo Sci., Graduate Univ. for Adv. Studies, Hayama, Japan
Volume
1
fYear
2003
fDate
15-19 Dec. 2003
Abstract
Magnetic field dependence of THz-radiation from InAs surface was investigated up to 28-T. It is found that THz-radiation power exhibits oscillation-behavior with increasing magnetic-field, and the maximum power is obtained at around 3-T.
Keywords
III-V semiconductors; arsenic compounds; high-speed optical techniques; indium compounds; magnetic fields; submillimetre waves; 27 T; 3 T; InAs; InAs surface; THz-radiation power oscillations; femto-second-laser irradiation; magnetic-field dependence; Intrusion detection; Magnetic field measurement; Magnetic fields; Magnetic materials; Magnetic semiconductors; Photoconducting materials; Physics; Saturation magnetization; Semiconductor materials; Ultrafast optics;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2003. CLEO/Pacific Rim 2003. The 5th Pacific Rim Conference on
Print_ISBN
0-7803-7766-4
Type
conf
DOI
10.1109/CLEOPR.2003.1274826
Filename
1274826
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