Title :
Efficient Modeling and Simulation of Graphene Devices With the LOD-FDTD Method
Author :
Ahmed, Ishtiaq ; Eng Huat Khoo ; Erping Li
Author_Institution :
Electron. & Photonics Dept., Inst. of High Performance Comput., Singapore, Singapore
Abstract :
The intraband term of the graphene electronic model is incorporated into Maxwell equations, and then the locally one-dimensional finite difference time domain (LOD-FDTD) method is applied to simulate graphene devices efficiently. Numerical results of the approach are compared with the explicit FDTD method. At Courant Friedrich Levy number (CFLN) equal to 100, the proposed approach is approximately 60% faster in terms of simulation time and with reasonable accuracy as compared to the FDTD method.
Keywords :
Maxwell equations; finite difference time-domain analysis; graphene; C; CFLN; Courant Friedrich Levy number; LOD-FDTD method; Maxwell equations; graphene devices; graphene electronic model; locally 1D finite difference time domain; Courant Friedrich Levy (CFL) limit; finite difference time domain (FDTD); graphene; locally one-dimensional FDTD (LOD-FDTD);
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2013.2258463
