DocumentCode :
405600
Title :
A comparison of bipolar technologies for linear handset power amplifier applications
Author :
Nellis, Keith ; Zampardi, Peter
Author_Institution :
Skyworks Solutions, Inc., Newbury Park, CA, USA
fYear :
2003
fDate :
28-30 Sept. 2003
Firstpage :
3
Lastpage :
6
Abstract :
This work evaluates four bipolar technologies that are currently competing to become, or remain as, the preferred bipolar technology for the commercial development of linear handset power amplifier modules. The four technologies are: GaAs HBT, Si BJT, SiGe HBT, and InP HBT. The purpose of this work is to evaluate each of these competing technologies in terms of linear handset PA requirements (i.e. POUT, ACPR, PAE, PGAIN, and ruggedness).
Keywords :
III-V semiconductors; bipolar transistors; gallium arsenide; heterojunction bipolar transistors; indium compounds; integrated circuit testing; power amplifiers; silicon compounds; BJT; GaAs; HBT; InP; SiGe; bipolar junction transistors; bipolar technologies; heterojunction bipolar transistors; linear handset power amplifier; Bipolar transistors; Gallium compounds; Heterojunction bipolar transistors; Indium compounds; Integrated circuit testing; Power amplifiers; Silicon compounds;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2003. Proceedings of the
ISSN :
1088-9299
Print_ISBN :
0-7803-7800-8
Type :
conf
DOI :
10.1109/BIPOL.2003.1274924
Filename :
1274924
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=405600
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