Title :
Dielectric reliability and material properties of Al2O3 in metal insulator metal capacitors (MIMCAP) for RF bipolar technologies in comparison to SiO2, SiN and Ta2O5
Author :
Allers, K.-H. ; Brenner, P. ; Schrenk, M.
Author_Institution :
Corporate Logic, Reliability Dept., Infineon Technol. AG, Munich, Germany
Abstract :
The intrinsic dielectric properties of Al2O3 have been investigated with respect to MIMCAP applications and compared to SiO2, SiN and Ta2O5. Al2O3 may be scaled down to 20nm (3.5fF/μm2) while still meeting the reliability requirements and thus surpassing SiN and SiO2 considerably. C(V) dependence (about 100ppm/V2 @ 50nm for the quadratic voltage coefficient) and dielectric loss (tanδ=0.0024) meet the requirements for analog and RF applications. Compared to Ta2O5, Al2O3 has much lower leakage, but a slight disadvantage in achievable specific capacitance.
Keywords :
MIM devices; aluminium compounds; capacitors; dielectric properties; semiconductor device reliability; semiconductor device testing; silicon compounds; tantalum compounds; Al2O3; MIMCAP; RF application; RF bipolar technologies; SiN; SiO2; Ta2O5; analog application; dielectric loss; dielectric properties; dielectric reliability; material properties; metal insulator metal capacitors; Aluminum compounds; Capacitors; MIM devices; Semiconductor device reliability; Semiconductor device testing; Silicon compounds;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2003. Proceedings of the
Print_ISBN :
0-7803-7800-8
DOI :
10.1109/BIPOL.2003.1274930
