An accurate method to determine the substrate network elements and base resistance

An accurate and robust method to determine the substrate network elements and base resistance of bipolar transistors from S-parameter measurements is proposed in this work. The investigated substrate network is compatible with up-to-date large-signal models like HICUM and includes the substrate-collector depletion capacitance, substrate resistance and capacitance. As an improvement upon the impedance circle method, the base resistance extraction method introduced in this work takes into account not only the extrinsic base-collector, but also the extrinsic base-emitter capacitance.