Title :
Study on extremely thin base SiGe:C HBTs featuring sub 5-ps ECL gate delay
Author :
Tominari, Tatsuya ; Wada, Shinichro ; Tokunaga, Kazuaki ; Koyu, Kaoru ; Kubo, Maki ; Udo, Tsutomu ; Seto, Motoshi ; Ohhata, Kenichi ; Hosoe, Hideyuki ; Kiyota, Yukihiro ; Washio, Katsuyoshi ; Hashimoto, Takashi
Author_Institution :
Device Dev. Center, Hitachi Ltd., Tokyo, Japan
Abstract :
A thin and heavily-boron-doped SiGe:C base was selectively grown by low pressure chemical vapour deposition (LPCVD). To achieve high-speed performance, we performed carbon doping in the base region and studied as-grown intrinsic base width scaled-down toward a thickness of 1 nm with high SiGe-epi process stability and high transistor yield. We achieved fT/fMAX of 170/204 GHz maximum clock frequency of 16:1 MUX in this HBT.
Keywords :
boron; carbon; chemical vapour deposition; emitter-coupled logic; epitaxial growth; heterojunction bipolar transistors; semiconductor device manufacture; silicon compounds; 1 nm; 170 GHz; 204 GHz; 5 ps; ECL gate delay; LPCVD; SiGe:B; SiGe:C; as-grown intrinsic base width; base region; carbon doping; clock frequency; emitter coupled delay; heterojunction bipolar transistor; low pressure chemical vapour deposition; process stability; thin base HBT; transistor yield; Boron; CVD; Carbon; Emitter coupled logic; Epitaxial growth; Heterojunction bipolar transistors; Semiconductor device manufacture; Silicon compounds;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2003. Proceedings of the
Print_ISBN :
0-7803-7800-8
DOI :
10.1109/BIPOL.2003.1274946
