• DocumentCode
    405609
  • Title

    Impact of collector-base junction traps and high injection barrier effect on 1/f noise

  • Author

    Tang, Jin ; Niu, Guofu ; Joseph, Alvin J. ; Harame, David L.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Auburn Univ., AL, USA
  • fYear
    2003
  • fDate
    28-30 Sept. 2003
  • Firstpage
    175
  • Lastpage
    178
  • Abstract
    This work investigates the impact of CB junction traps and high injection barrier effect on 1/f noise in SiGe HBTs. By comparing the 1/f noise of standard and high breakdown voltage HBTs, we show that the collector-base junction traps result in not only a higher IB, but also higher base current 1/f noise at high injection. The base current 1/f noise level remains proportional to IB2.
  • Keywords
    1/f noise; electric noise measurement; heterojunction bipolar transistors; semiconductor device measurement; semiconductor device testing; semiconductor heterojunctions; 1/f noise; CB junction traps; HBT; SiGe; base current; breakdown voltage; collector-base junction traps; heterojunction bipolar transistor; high injection barrier effect; Heterojunction bipolar transistors; Noise measurement; Random noise; Semiconductor device testing; Semiconductor heterojunctions;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bipolar/BiCMOS Circuits and Technology Meeting, 2003. Proceedings of the
  • ISSN
    1088-9299
  • Print_ISBN
    0-7803-7800-8
  • Type

    conf

  • DOI
    10.1109/BIPOL.2003.1274961
  • Filename
    1274961
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=405609