BiCMOS7RF: a highly-manufacturable 0.25-μm BiCMOS RF-applications-dedicated technology using non selective SiGe:C epitaxy

Author

Baudry, H. ; Szelag, B. ; Deléglise, F. ; Laurens, M. ; Mourier, J. ; Saguin, F. ; Troillard, G. ; Chantre, A. ; Monroy, A.

Author_Institution

STMicroelectronics, Crolles, France

fYear

2003

fDate

28-30 Sept. 2003

Firstpage

207

Lastpage

210

Abstract

This paper describes ST new BiCMOS RF technology based on a mature 0.25μm CMOS process. Two SiGe:C HBTs are implemented for low and high voltage applications. Very low noise figure of 0.4dB at 2GHz is achieved. Other devices like isolated vertical PNP BJT, NLDEMOS and advanced passives are integrated in this technology to address RF circuit needs.

Keywords

BiCMOS integrated circuits; carbon; epitaxial growth; heterojunction bipolar transistors; integrated circuit manufacture; radiofrequency integrated circuits; silicon compounds; 0.25 micron; 0.4 dB; 2 GHz; BiCMOS RF-applications-dedicated technology; BiCMOS7RF; HBT; NLDEMOS; SiGe:C; advanced passive devices; bipolar junction transistor; heterojunction bipolar transistor; isolated vertical PNP BJT; noise figure; nonselective epitaxy; BiCMOS integrated circuits; Carbon; Epitaxial growth; Heterojunction bipolar transistors; Integrated circuit manufacture; Silicon compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 2003. Proceedings of the

ISSN

1088-9299

Print_ISBN

0-7803-7800-8

Type

conf

DOI

10.1109/BIPOL.2003.1274967

Filename

1274967