Title :
Ultrafast intersubband relaxation at 1.55 μm in GaN/AlN MQWs
Author :
Hamazaki, J. ; Matsui, S. ; Kunugita, H. ; Ema, K. ; Kanazawa, H. ; Tachibana, T. ; Kikuchi, A. ; Kishino, K.
Author_Institution :
Dept. of Phys., Sophia Univ., Tokyo, Japan
Abstract :
We have observed intersubband transition dynamics in GaN/AlN MQWs at 1.55 μm. The relaxation dynamics consists of ultrafast component of ∼170 fs and slower component of ∼1.1 ps. We discussed the origin of these dynamics.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; high-speed optical techniques; relaxation; semiconductor quantum wells; wide band gap semiconductors; 1.55 mum; GaN-AlN; GaN/AlN MQWs; intersubband transition dynamics; relaxation dynamics; time-resolved pump-probe technique; ultrafast component; ultrafast intersubband relaxation; Delay effects; Gallium nitride; Physics; Probes; Quantum well devices; Scattering; Solid modeling;
Conference_Titel :
Lasers and Electro-Optics, 2003. CLEO/Pacific Rim 2003. The 5th Pacific Rim Conference on
Print_ISBN :
0-7803-7766-4
DOI :
10.1109/CLEOPR.2003.1277095
