DocumentCode
405679
Title
Ultrafast intersubband relaxation at 1.55 μm in GaN/AlN MQWs
Author
Hamazaki, J. ; Matsui, S. ; Kunugita, H. ; Ema, K. ; Kanazawa, H. ; Tachibana, T. ; Kikuchi, A. ; Kishino, K.
Author_Institution
Dept. of Phys., Sophia Univ., Tokyo, Japan
Volume
2
fYear
2003
fDate
15-19 Dec. 2003
Abstract
We have observed intersubband transition dynamics in GaN/AlN MQWs at 1.55 μm. The relaxation dynamics consists of ultrafast component of ∼170 fs and slower component of ∼1.1 ps. We discussed the origin of these dynamics.
Keywords
III-V semiconductors; aluminium compounds; gallium compounds; high-speed optical techniques; relaxation; semiconductor quantum wells; wide band gap semiconductors; 1.55 mum; GaN-AlN; GaN/AlN MQWs; intersubband transition dynamics; relaxation dynamics; time-resolved pump-probe technique; ultrafast component; ultrafast intersubband relaxation; Delay effects; Gallium nitride; Physics; Probes; Quantum well devices; Scattering; Solid modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2003. CLEO/Pacific Rim 2003. The 5th Pacific Rim Conference on
Print_ISBN
0-7803-7766-4
Type
conf
DOI
10.1109/CLEOPR.2003.1277095
Filename
1277095
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