DocumentCode
405693
Title
Quantum dot structures and their optical properties of a high-indium InGaN film
Author
Feng, Shih-Wei ; En-Chiang Lin ; Cheng, Yung-Chen ; Wang, Hsiang-Chen ; Yang, C.C. ; Ma, Kung-Jen ; Shen, Cheng-Hsing ; Chen, L.C. ; Kim, K.H. ; Lin, J.Y. ; Jiang, H.X.
Author_Institution
Graduate Inst. of Electro-Opt. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Volume
2
fYear
2003
fDate
15-19 Dec. 2003
Abstract
Yellow luminescence from an InGaN film of high indium content shifted into blue emission upon thermal annealing. The shift was attributed to the quantum dot-like cluster size reduction through spinodal decomposition at thermal annealing.
Keywords
III-V semiconductors; annealing; gallium compounds; indium compounds; photoluminescence; semiconductor quantum dots; semiconductor thin films; spinodal decomposition; InGaN; blue emission; high indium content; high-indium InGaN film; optical properties; quantum dot structures; quantum dot-like cluster size reduction; spinodal decomposition; thermal annealing; yellow luminescence; Annealing; Electrons; Gallium nitride; Indium; Luminescence; Optical buffering; Optical films; Potential well; Quantum dots; Thermal decomposition;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2003. CLEO/Pacific Rim 2003. The 5th Pacific Rim Conference on
Print_ISBN
0-7803-7766-4
Type
conf
DOI
10.1109/CLEOPR.2003.1277175
Filename
1277175
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