• DocumentCode
    405834
  • Title

    Charge pump system sharing the coupling capacitors for NOR flash memory

  • Author

    Wu Dong ; Pan Liyang ; Zhu Jun

  • Author_Institution
    Inst. of Microelectron., Tsinghua Univ., Beijing, China
  • Volume
    1
  • fYear
    2003
  • fDate
    21-24 Oct. 2003
  • Firstpage
    466
  • Abstract
    A novel charge pump system sharing the coupling capacitors for NOR architecture flash memory is proposed in this paper. Two charge pumps operating alternatively can share the coupling capacitors. With the proposed technique, the chip size of the charge pump circuit is only about three fourths compared to the traditional circuit. In order to improve the performances of the negative charge pump, a special circuit is also designed to dynamically control the substrate bias of the PMOS transistors.
  • Keywords
    MOSFET; NOR circuits; capacitors; flash memories; voltage control; NOR architecture flash memory; PMOS transistors substrate voltage control; charge pump system; coupling capacitors; negative charge pump; p channel metal oxide semiconductor transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    ASIC, 2003. Proceedings. 5th International Conference on
  • ISSN
    1523-553X
  • Print_ISBN
    0-7803-7889-X
  • Type

    conf

  • DOI
    10.1109/ICASIC.2003.1277587
  • Filename
    1277587