DocumentCode :
405834
Title :
Charge pump system sharing the coupling capacitors for NOR flash memory
Author :
Wu Dong ; Pan Liyang ; Zhu Jun
Author_Institution :
Inst. of Microelectron., Tsinghua Univ., Beijing, China
Volume :
1
fYear :
2003
fDate :
21-24 Oct. 2003
Firstpage :
466
Abstract :
A novel charge pump system sharing the coupling capacitors for NOR architecture flash memory is proposed in this paper. Two charge pumps operating alternatively can share the coupling capacitors. With the proposed technique, the chip size of the charge pump circuit is only about three fourths compared to the traditional circuit. In order to improve the performances of the negative charge pump, a special circuit is also designed to dynamically control the substrate bias of the PMOS transistors.
Keywords :
MOSFET; NOR circuits; capacitors; flash memories; voltage control; NOR architecture flash memory; PMOS transistors substrate voltage control; charge pump system; coupling capacitors; negative charge pump; p channel metal oxide semiconductor transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
ASIC, 2003. Proceedings. 5th International Conference on
ISSN :
1523-553X
Print_ISBN :
0-7803-7889-X
Type :
conf
DOI :
10.1109/ICASIC.2003.1277587
Filename :
1277587
Link To Document :
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