Title :
CMOS bandgap voltage reference with 1.8-V power supply
Author :
Yang Li ; Shi Yufeng ; Li Lian
Author_Institution :
ASIC & Syst. State Key Lab., Fudan Univ., Shanghai, China
Abstract :
To overcome the limitation of the silicon energy gap in electron volts 1.2 V which leads to that the voltage reference is fixed at about 1.2 V, a design of current-mode (CM) architecture CMOS bandgap voltage reference with arbitrary voltage value by setting the resistor value is presented here with low 1.8-V power supply. The simulation results indicate a temperature coefficient (TC) of 5 ppm/°C from -20°C to 125°C after trimming and a power supply rejection ratio (PSRR) of 64 dB.
Keywords :
CMOS integrated circuits; elemental semiconductors; energy gap; power supply circuits; reference circuits; silicon; -20 to 125 degC; 1.8 V; CM architecture; PSRR; Si; complementary metal oxide semiconductor; current mode CMOS bandgap voltage reference; electron volts; power supply rejection ratio; silicon energy gap; temperature coefficient;
Conference_Titel :
ASIC, 2003. Proceedings. 5th International Conference on
Print_ISBN :
0-7803-7889-X
DOI :
10.1109/ICASIC.2003.1277623
