Title :
MOCVD growth of high quality crack-free GaN
Author :
Zhang, B.S. ; Zhu, J.J. ; Wang, Y.T. ; Yang, H.
Author_Institution :
State Key Lab. on Integrated Optoelectronics, Chinese Acad. of Sci., Beijing, China
Abstract :
High quality crack free GaN epilayers were grown on Si(111) substrates. Low temperature AlN interlayer grown under low V/III ratio was used to effectively eliminate the formation of micro-cracks. It is found that tensile stress in the GaN epilayer decreases as the N/Al ratio decreases used for AlN interlayer growth. The high optical and structural qualities of the GaN/Si samples were characterized by RBS, PL and XRD measurements. The RT-PL FWHM of the band edge emission is only 39.5 meV. The XRD FWHM of the GaN/Si sample is 8.2 arcmin, which is among the best values ever reported.
Keywords :
III-V semiconductors; MOCVD; Rutherford backscattering; X-ray diffraction; aluminium compounds; gallium compounds; microcracks; photoluminescence; semiconductor epitaxial layers; semiconductor growth; wide band gap semiconductors; 39.5 meV; AlN interlayer growth; AlN-GaN-Si; GaN epilayers; GaN/Si samples; MOCVD growth; N/Al ratio; PL measurements; RBS measurements; Si; Si(111) substrates; V/III ratio; XRD measurements; band edge emission; high optical quality; high quality crack-free GaN; low temperature AlN interlayer; microcracks; tensile stress; Artificial intelligence; Crystallization; Gallium nitride; Integrated optoelectronics; Laboratories; MOCVD; Substrates; Temperature dependence; Tensile stress; X-ray scattering;
Conference_Titel :
Optoelectronics, Proceedings of the Sixth Chinese Symposium
Print_ISBN :
0-7803-7887-3
DOI :
10.1109/COS.2003.1278159
