Title :
IC-compatible processing of inertial sensors using SF6-O2 cryogenic plasma process
Author :
Craciun, G. ; Yang, H. ; Pakula, L. ; French, P.J. ; Blauw, M.A. ; van der Drift, E.
Author_Institution :
TU Delft, Netherlands
Abstract :
An IC-technology compatible process lor high aspect ratio trench based microinertial devices was developed, using cryogenic SF6-O2 plasma etching as a single postprocessing step. Furthermore it involves either silicon to silicon dry etch BCB bonding, Si wafer thinning and a method for front-to-backside alignment using ASML PAS5000/50 waferstepper. The wafer thinning is performed using TMAH wet etching bringing the advantage of possible batch fabrication. The process flow includes a single resist mask for both the Al etching and the high aspect ratio plasma etching of the mechanical structure.
Keywords :
aluminium; cryogenics; gyroscopes; inertial systems; micromachining; microsensors; silicon; sputter etching; sulphur compounds; ASML PAS5000/50; Al; BCB bonding; IC; SF6-O2; Si; TMAH wet etching; Waferstepper; batch fabrication; cryogenic plasma process; gyroscope; inertial sensors; microinertial devices; micromachining; plasma etching; resist mask; silicon dry etch; wafer thinning; Cryogenics; Dry etching; Fabrication; Plasma applications; Plasma devices; Plasma materials processing; Resists; Silicon; Wafer bonding; Wet etching;
Conference_Titel :
Sensors, 2003. Proceedings of IEEE
Print_ISBN :
0-7803-8133-5
DOI :
10.1109/ICSENS.2003.1278976