A monolithic phase measurement photodetector

Author

Arguel, P. ; Valentin, J. ; Fourment, S. ; Lozes-Dupuy, F. ; Sarrabayrouse, G. ; Bonnefont, S. ; Jourlin, Y. ; Reynaud, S. ; Destouches, N. ; Tishchenko, A. ; Jay, J.

Author_Institution

LAAS-CNRS, Toulouse, France

Volume

2

fYear

2003

fDate

22-24 Oct. 2003

Firstpage

783

Abstract

A novel monolithically integrated photodetector used as an optical phase-shift sensor is presented It consists of a diffraction grating etched at the surface of a p-n photodiode fabricated by standard silicon CMOS technology. This device provides the phase relationship between two coherent light beams collimated toward the surface of the photodetector. The operating principle of this sensor is presented along with the first devices fabricated and the experimental validation of the concept is demonstrated by performance characterization.

Keywords

CMOS integrated circuits; diffraction gratings; integrated optics; optical phase shifters; photodetectors; CMOS technology; coherent light beams; diffraction grating; monolithic phase measurement photodetector; monolithically integrated photodetector; optical phase-shift sensor; p-n photodiode; phase relationship; CMOS technology; Diffraction gratings; Etching; Integrated optics; Optical diffraction; Optical sensors; Phase measurement; Photodetectors; Photodiodes; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Sensors, 2003. Proceedings of IEEE

Print_ISBN

0-7803-8133-5

Type

conf

DOI

10.1109/ICSENS.2003.1279048

Filename

1279048