Title :
The chaotic characteristics of transistor noise at low frequency
Author :
Kai, HE ; Shu-xun, Wang
Author_Institution :
Sch. of Commun. Eng., Jilin Univ., Changchun, China
Abstract :
For a long time, people have described the transistor noise at low frequency with the theory of random process. In this paper, based on reconstructing phase space of the transistor EN noise time series, the nonlinear dynamic parameters are studied. The results of our study demonstrated that the transistor EN noise at low frequency has a limited fractional dimension, besides that, the largest Lyapunov exponent of the transistor EN noise is positive, so we can draw the conclusion that the transistor EN noise at low frequency has some chaotic characteristics.
Keywords :
Lyapunov methods; chaos; random processes; semiconductor device noise; time series; transistors; Lyapunov exponent; chaotic characteristics; noise time series; nonlinear dynamic parameters; random process; transistor noise; Bandwidth; Battery charge measurement; Chaos; Frequency estimation; Frequency measurement; Gain measurement; Low-frequency noise; Noise level; Noise measurement; Signal processing;
Conference_Titel :
Neural Networks and Signal Processing, 2003. Proceedings of the 2003 International Conference on
Conference_Location :
Nanjing
Print_ISBN :
0-7803-7702-8
DOI :
10.1109/ICNNSP.2003.1279351